RSS065N06 transistors 1/4 4v drive nch mosfet RSS065N06 z structure z dimensions ( unit : mm ) silicon n-channel mosfet each lead has same dimensions sop8 z features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). z application switching z packaging specifications z e q uivalent circuit ?a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. (1)source (2)source (3)source (4)gate (5)drain (6)drain (7)drain (8)drain ?1 esd protection diode ?2 body diode ?2 ?1 (8) (7) (6) (5) (1) (2) (3) (4) (1) (2) (3) (4) (8) (7) (6) (5) package code taping basic ordering unit (pieces) RSS065N06 tb 2500 type z absolute maximum ratings (ta = 25 c) parameter v v dss symbol 60 v v gss 20 a i d 6.5 a i dp 26 a i s 1.6 a i sp 26 w p d 2.0 c tch 150 c tstg ?55 to +150 limits unit drain-source voltage gate-source voltage drain current total power dissipatino channel temperature range of storage temperature continuous pulsed continuous source current (body diode) pulsed ?1 pw10s, duty cycle1% ? 2 mounted on a ceramic board. ? 1 ? 1 ? 2 z thermal resistance c / w rth (ch-a) 62.5 parameter symbol limits unit channel to ambient ? mounted on a ceramic board. ?
RSS065N06 transistors 2/4 z electrical characteristics (ta = 25 c) parameter symbol i gss y fs min. ?? 10 av gs =20v, v ds =0v v dd 30v typ. max. unit conditions gate-source leakage v (br) dss 60 ?? vi d =1ma, v gs =0v drain-source breakdown voltage i dss ?? 1 av ds =60v, v gs =0v zero gate voltage drain current v gs (th) 1.0 ? 2.5 v v ds =10v, i d =1ma gate threshold voltage ? 24 37 i d =6.5a, v gs =10v static drain-source on-state resistance r ds (on) ? 28 44 m i d =6.5a, v gs =4.5v forward transfer admittance ? 31 48 i d =6.5a, v gs =4.0v input capacitance 4 ?? si d =6.5a, v ds =10v output capacitance c iss ? 900 ? pf v ds =10v reverse transfer capacitance c oss ? 200 100 ? pf v gs =0v turn-on delay time c rss ? 13 ? pf f =1mhz v gs =10v r l =9.1 r l =4.6, r g =10 r g =10 rise time t d (on) ? 25 ? ns turn-off delay time t r ? 60 ? ns fall time t d (off) ? 20 ? ns total gate charge t f ? 11 ? ns gate-source charge q g ? 2 16 nc gate-drain charge q gs ? 4 ? nc v gs =5v q gd ?? nc i d =6.5a, ?pulsed ? ? ? ? ? ? ? ? ? i d =3.3a, v dd 30v z body diode characteristics (source-drain) (ta = 25 c) forward voltage v sd ?? 1.2 v i s =1.6a, v gs =0v parameter symbol min. typ. max. unit conditions ?pulsed ?
RSS065N06 transistors 3/4 z electrical characteristic curves 0.0 0.5 1.0 1.5 2.0 2.5 4.0 3.0 3.5 gate-source voltage : v gs (v) 10 1 0.1 0.01 0.001 drain current : i d (a) fig.1 typical transfer characteristics ta= ?25c ta=25c ta=75c ta=125c v ds =10v pulsed v gs =10v pulsed 0.01 1 0.1 10 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ) fig.2 static drain-source on-state resistance vs. drain current() ta= ?25c ta=25c ta=75c ta=125c fig.3 static drain-source on-state resistance vs. drain current(? ) v gs =4.5v pulsed 0.01 1 0.1 10 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ) ta= ?25c ta=25c ta=75c ta=125c fig.4 static drain-source on-state resistance vs. drain current(?? ) v gs =4v pulsed 0.01 1 0.1 10 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ) ta= ?25c ta=25c ta=75c ta=125c 0 5 10 15 gate-source voltage : v gs (v) 0 50 100 static drain-source on-state resistance : r ds (on) ( m ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta=25c pulsed i d =3.25a i d =6.5a 0.01 0.1 1 10 100 drain-source voltage : v ds (v) 10 capacitance : c (pf) 10000 100 1000 ta=25c f=1mhz v gs =0v fig.6 typical capacitance vs. drain-source voltage c iss c oss c rss 0.01 0.1 1 10 drain current : i d (a) 1 10 switching time : t (ns) 1000 10000 100 ta=25c v dd =30v v gs =10v r g =10 pulsed fig.7 switching characteristics t d(off) t d(on) t r t f 0 5 10 15 20 total gate charge : qg (nc) 0 5 10 gate-source voltage : v gs (v) ta=25c v dd =30v i d =6.5a r g =10 pulsed fig.8 dynamic input characteristics 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) 0.01 0.1 1 10 source current : i s (a) fig.9 source current vs. source-drain voltage v gs =0v pulsed ta=125c ta=75c ta=25c ta= ?25c
RSS065N06 transistors 4/4 z measurement circuit fig.10 switching time test circuit v gs r g v ds d.u.t. i d r l v dd fig.11 switching time waveforms 90% 50% 50% 10% 10% 90% 90% 10% v gs v ds t on t off t r t d(on) t r t d(off) pulse width fig.12 gate charge test circuit v gs i g (const.) r g v ds d.u.t. i d r l v dd fig.13 gate charge waveform v g v gs charge q g q gs q gd
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2007 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21, saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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